Tuning Supercurrent in Josephson Field-Effect Transistors Using h-BN Dielectric

Epitaxial Al-InAs heterostructures appear as a promising materials platform for exploring mesoscopic and topological superconductivity. A unique property of Josephson junction field effect transistors (JJ-FETs) fabricated on these is the ability to tune supercurrent using metallic gate. Here, we report fabrication measurement gate-tunable JJ-FETs in which gate dielectric contact with InAs produced by mechanically exfoliated hexagonal boron nitride (h-BN) followed dry transfer. We discuss versatile process that enables compatibility between layered material transfer allows us achieve full gate-tunability only 5 nm thick h-BN flakes. Our study shows pristine properties epitaxial junctions, such product normal resistance critical current, IcRn, are preserved. Furthermore, complementary measurements confirm changes channel density less when compared atomic layer deposition Al2O3.